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Company Name : Toshiba Electronic Devices & Storage Corporation

Tuesday, December 19, 2017 9:15AM IST (3:45AM GMT)

(BW)(TOSHIBA)

Toshiba Electronic Devices & Storage Corporation Releases 100V N-Channel Power MOSFETs for Industrial Applications with the Industry's Lowest-in-Class On-Resistance


Expanding the line-up of the low-voltage U-MOS IX-H power MOSFET series


TOKYO, Japan

Toshiba Electronic Devices & Storage Corporation has started to ship “TPH3R70APL” and “TPN1200APL,” new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.

 

This press release features multimedia. View the full release here: http://www.businesswire.com/news/home/20171218005375/en/

 

Toshiba Electronic Devices & Storage Corporation:100V N-channel power MOSFETs "TPH3R70APL" for indus ...

Toshiba Electronic Devices & Storage Corporation:100V N-channel power MOSFETs "TPH3R70APL" for industrial applications. (Photo: Business Wire)

Fabricated with the company’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class On-resistance[1]. In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower “RDS(ON) × Qoss”, On-resistance times output charge, and “RDS(ON) × QSW”, On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications[2].

 

Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio in line with market trends in order to help improve power supply efficiency.

 

Applications

 

- Power supplies for industrial equipment
- Motor control equipment

 

Features

 

- Industry’s lowest-in-class On-resistance[1]
RDS(ON) = 3.7mΩ (max) @ VGS = 10V (TPH3R70APL)
RDS(ON) = 11.5mΩ (max) @ VGS = 10V (TPN1200APL)
- Low output charge and low gate switch charge
- Allows 4.5V logic level drive

 
 

Main Specifications

 

 (Unless otherwise specified, @Ta=25°C)

Part

number

  Absolute

maximum ratings

  Drain-source

On-resistance

 

RDS(ON) max

 

(mΩ)

 

Total

 

gate

 

charge

 

Qg
typ.

 

(nC)

 

Gate
switch
charge

 

Qsw
typ.
(nC)

 

 

 

Output
charge
Qoss
typ.

 

(nC)

 

Input

 

capacitance
Ciss
typ.

 

(pF)

  Package
 

Drain-

 

source

 

voltage
VDSS (V)

 

Drain

 

current
(DC)
ID
@Tc =
25℃
(A)

 

@V
GS=
10V

 

@V
GS=
4.5V

         
TPH3R70APL   100   90   3.7   6.2   67   21   74   4850  

SOP
Advance

TPN1200APL     40   11.5   20   24   7.5   24   1425  

TSON
Advance

 

Notes:
[1] As of December 18, 2017 for MOSFETs with equivalent ratings. Toshiba Electronic Devices & Storage Corporation survey.
[2] TPH3R70APL has 10% lower RDS(ON) × Qoss than the U-MOS VIII-H series TPH4R10ANL.
TPH3R70APL has 10% lower RDS(ON) × QSW than the U-MOS VIII-H series TPH4R10ANL.

 

Follow the link below for more on MOSFET line-up.
https://toshiba.semicon-storage.com/ap-en/product/mosfet.html

 

Customer Inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3933
https://toshiba.semicon-storage.com/ap-en/contact.html

 

*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

About Toshiba Electronic Devices & Storage Corporation

 

Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since being spun off from Toshiba Corporation in July 2017, we have taken our place among the leading general devices companies, and offer our customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.

 

Our 19,000 employees around the world share a determination to maximize the value of our products, and emphasize close collaboration with customers to promote co-creation of value and new markets. We look forward to building on annual sales now surpassing 700-billion yen (US$6 billion) and to contributing to a better future for people everywhere.
Find out more about us at https://toshiba.semicon-storage.com/ap-en/company.html

 

 

 

 
MULTIMEDIA AVAILABLE :
http://www.businesswire.com/news/home/20171218005375/en/


Click here for Media Contact Details
CONTACTS :

Media Inquiries:
Toshiba Electronic Devices & Storage Corporation
Chiaki Nagasawa, +81-3-3457-4963
Digital Marketing Department
semicon-NR-mailbox@ml.toshiba.co.jp


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