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Company Name : Toshiba Electronic Devices & Storage Corporation

Sunday, January 28, 2018 4:59PM IST (11:29AM GMT)

(BW)(TOSHIBA)

Toshiba Electronic Devices & Storage Corporation Introduces SOI Process with Low Noise Figure for Low-Noise RF Amplifiers for Smartphones


TOKYO, Japan

Toshiba Electronic Devices & Storage Corporation announced the development of “TaRF10,” a next generation TarfSOITM (Toshiba advanced RF SOI[1]) process optimized for low-noise amplifiers (LNAs) in smartphone applications.

 

This press release features multimedia. View the full release here: http://www.businesswire.com/news/home/20180125006449/en/

 
Toshiba Electronic Devices & Storage Corp.: Appearance of LNA fabricated with TaRF10 (Photo: Busines ...

Toshiba Electronic Devices & Storage Corp.: Appearance of LNA fabricated with TaRF10 (Photo: Business Wire)

In recent years, the increasing speed of mobile data communication has expanded use of RF switches and filters in the analog front end of mobile devices. The resulting increase in signal loss between antenna and receiver circuit has degraded receiver sensitivity, and focused attention on LNAs with a low noise figure[2] (NF) as a means to compensate for signal loss and improve the integrity of the received signal.

 

Toshiba Electronic Devices & Storage has used its new TaRF10 process to develop a prototype LNA with an outstanding noise figure of 0.72dB and a gain[3] of 16.9dB at a frequency of 1.8GHz.

 

Mobile devices use many RF switches and LNAs in the receiver circuit, generating a need to reduce circuit size in order to reduce board area utilization. Current LNAs typically use silicon-germanium-carbon (SiGe:C) bipolar transistors, and it has been difficult to integrate LNAs and RF switches fabricated with different processes on the same chip.

 

The new TaRF10 process can integrate LNAs, control circuits and RF switches on a single chip, as it is highly compatible with the TaRF8 and TaRF9 processes for RF switches, which secure outstanding RF characteristics. TaRF9 realizes lower insertion loss and signal distortion than TaRF8. Toshiba Electronic Devices & Storage now plans to bring to market LNAs with integrated RF switches.

 


Toshiba Electronic Devices & Storage has developed RF ICs utilizing its subsidiary, Japan Semiconductor Corporation to apply the latest SOI-CMOS technology, and by handling all aspects of the production flow, from RF process technology development to the design and manufacturing, secured a rapid products launch.
To meet next-generation market requirements for 5G smartphones, the company will continue to further improve the characteristics of the TarfSOITM process and develop RF ICs with cutting-edge technology.

 

Table 1. Main Specifications of LNA

    Mode  

LNA applying TaRF 10
process

  Unit
Chip Size   -                       0.70×0.43   Mm
Frequency   -                       1.8   GHz
Supply Voltage   -                       1.8   V
Supply Current   Gain mode   7.4   mA
  Bypass mode   50   μA
Control Voltage   Gain mode   1.8   V
  Bypass mode   0   V
Gain   Gain mode   16.9   dB
  Bypass mode   -1.6   dB
NF   Gain mode   0.72   dB
Return Loss (In)   Gain mode   8.4   dB
Return Loss (Out)   Gain mode   12.1   dB
Reverse Isolation   Gain mode   26.5   dB
IP1dB   Gain mode   -8.9   dBm
IIP3   Gain mode   4.3   dBm
 

Notes:
[1] TarfSOITM (Toshiba advanced RF SOI): Toshiba’s unique SOI-CMOS (silicon-on-insulator-complementary metal oxide semiconductor) front-end process
[2] Noise figure: the ratio of signal-to-noise ratio at the output to that at the input. The lower the noise figure, the lower the amplifier self-noise is and therefore the better.
[3] Gain: the ratio of the output power of an amplifier to its input power in dB

 

* Company names, product names, and service names mentioned herein may be trademarks of their respective companies.

 

Customer Inquiries:
Small Signal Device Sales & Marketing Department
Tel: +81-3-3457-3411
https://toshiba.semicon-storage.com/ap-en/contact.html

 

*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since being spun off from Toshiba Corporation in July 2017, we have taken our place among the leading general devices companies, and offer our customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.

 

Our 19,000 employees around the world share a determination to maximize the value of our products, and emphasize close collaboration with customers to promote co-creation of value and new markets. We look forward to building on annual sales now surpassing 700-billion yen (US$6 billion) and to contributing to a better future for people everywhere.
Find out more about us at https://toshiba.semicon-storage.com/ap-en/company.html

 

 
MULTIMEDIA AVAILABLE :
http://www.businesswire.com/news/home/20180125006449/en/


Click here for Media Contact Details
CONTACTS :

Media Inquiries:
Toshiba Electronic Devices & Storage Corporation
Chiaki Nagasawa, +81-3-3457-4963
Digital Marketing Department
semicon-NR-mailbox@ml.toshiba.co.jp


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